Facilities

Vacuum coating units:  To deposit thin film samples at desired substrate temperature and pressure 10-5 torr. The coating units are assigned exclusively for depositing different metal chalcogenides.
Vacuum Coating Unit for the deposition of Selenide thin films


Vacuum Coating Unit for the deposition of Telluride thin films


Vacuum Coating Unit for the deposition of Sulphide thin films


Vacuum Coating Unit for the deposition of metal electrodes.



Two Probe apparatus:  It is used to measure the DC   Conductivity. Measurements are taken under vacuum   of the order of 10-2 torr.


Tolansky’s Multiple beam Interferometric method: This method can be used to measure the thickness of a thin film to an accuracy of ±20A0.


Hot air oven: Used for annealing purposes.  Temperature can be controlled from ambient   temperature to 2500C